Initiation and evolution of phase separation in GaP/InP short-period superlattices
Identifieur interne : 00A911 ( Main/Repository ); précédent : 00A910; suivant : 00A912Initiation and evolution of phase separation in GaP/InP short-period superlattices
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Abstract
We have investigated the initiation and evolution of lateral phase separation in GaP/InP short-period superlattices (SPSs). Cross-sectional scanning tunneling microscopy reveals lateral contrast modulations within the SPS region, presumably due to alloy phase separation. The wavelength of the modulations appears to be constant throughout the entire SPS structure. Interestingly, the wavelength is dependent on the thickness of the constituent layers of the superlattice, and is likely to be affected by an observed significant concentration of group V vacancies. Together, these results suggest that phase separation is initiated by compositional nonuniformities from excess surface adatoms due to incomplete coverage of the constituent layers of the superlattice, and that the phase separation process is assisted by In-Ga interdiffusion via P vacancies. © 2004 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Initiation and evolution of phase separation in GaP/InP short-period superlattices</title><author><name sortKey="Shin, B" uniqKey="Shin B">B. Shin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Chen, W" uniqKey="Chen W">W. Chen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Goldman, R S" uniqKey="Goldman R">R. S. Goldman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Michigan</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Michigan, Ann Arbor</wicri:cityArea></affiliation></author><author><name sortKey="Song, J D" uniqKey="Song J">J. D. Song</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Information and Communications, Kwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 506-712, Korea</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Information and Communications, Kwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 506-712</wicri:regionArea><wicri:noRegion>Gwangju 506-712</wicri:noRegion></affiliation></author><author><name sortKey="Kim, J M" uniqKey="Kim J">J. M. Kim</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Information and Communications, Kwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 506-712, Korea</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Information and Communications, Kwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 506-712</wicri:regionArea><wicri:noRegion>Gwangju 506-712</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Y T" uniqKey="Lee Y">Y. T. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Information and Communications, Kwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 506-712, Korea</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Information and Communications, Kwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 506-712</wicri:regionArea><wicri:noRegion>Gwangju 506-712</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0076178</idno><date when="2004-01">2004-01</date><idno type="stanalyst">PASCAL 04-0076178 AIP</idno><idno type="RBID">Pascal:04-0076178</idno><idno type="wicri:Area/Main/Corpus">00BF89</idno><idno type="wicri:Area/Main/Repository">00A911</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical interdiffusion</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Phase separation</term><term>Semiconductor superlattices</term><term>Vacancies</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865C</term><term>6835F</term><term>6475</term><term>6172J</term><term>Etude expérimentale</term><term>Superréseau semiconducteur</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Séparation phase</term><term>Lacune</term><term>Diffusion mutuelle chimique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated the initiation and evolution of lateral phase separation in GaP/InP short-period superlattices (SPSs). Cross-sectional scanning tunneling microscopy reveals lateral contrast modulations within the SPS region, presumably due to alloy phase separation. The wavelength of the modulations appears to be constant throughout the entire SPS structure. Interestingly, the wavelength is dependent on the thickness of the constituent layers of the superlattice, and is likely to be affected by an observed significant concentration of group V vacancies. Together, these results suggest that phase separation is initiated by compositional nonuniformities from excess surface adatoms due to incomplete coverage of the constituent layers of the superlattice, and that the phase separation process is assisted by In-Ga interdiffusion via P vacancies. © 2004 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Initiation and evolution of phase separation in GaP/InP short-period superlattices</s1></fA08><fA11 i1="01" i2="1"><s1>SHIN (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHEN (W.)</s1></fA11><fA11 i1="03" i2="1"><s1>GOLDMAN (R. S.)</s1></fA11><fA11 i1="04" i2="1"><s1>SONG (J. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>KIM (J. M.)</s1></fA11><fA11 i1="06" i2="1"><s1>LEE (Y. T.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Information and Communications, Kwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, Gwangju 506-712, Korea</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>216-219</s1></fA20><fA21><s1>2004-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 B</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0076178</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of vacuum science and technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have investigated the initiation and evolution of lateral phase separation in GaP/InP short-period superlattices (SPSs). Cross-sectional scanning tunneling microscopy reveals lateral contrast modulations within the SPS region, presumably due to alloy phase separation. The wavelength of the modulations appears to be constant throughout the entire SPS structure. Interestingly, the wavelength is dependent on the thickness of the constituent layers of the superlattice, and is likely to be affected by an observed significant concentration of group V vacancies. Together, these results suggest that phase separation is initiated by compositional nonuniformities from excess surface adatoms due to incomplete coverage of the constituent layers of the superlattice, and that the phase separation process is assisted by In-Ga interdiffusion via P vacancies. © 2004 American Vacuum Society.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H35F</s0></fC02><fC02 i1="03" i2="3"><s0>001B60D75</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A72J</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6865C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6835F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6475</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6172J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Superréseau semiconducteur</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Semiconductor superlattices</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Séparation phase</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Phase separation</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Lacune</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Vacancies</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Diffusion mutuelle chimique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Chemical interdiffusion</s0></fC03><fN21><s1>047</s1></fN21><fN47 i1="01" i2="1"><s0>0406M000441</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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